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This is the accepted manuscript version. The article has been published in final form at https://doi.org/10.1016/j.diamond.2020.108207","subitem_rights_language":"en"}]},"item_1617186609386":{"attribute_name":"主題","attribute_value_mlt":[{"subitem_subject":"GaAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"diamond bonding interface","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Interfacial structure","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Heterointerface Direct bonding","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Power devices","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Heat sink","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_1617186626617":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The direct integrating of GaAs and diamond is achieved at room temperature via a surface activated bonding method. An ultrathin crystal defect layer composed of GaAs and diamond was formed at the bonding interface. The thickness of the GaAs and diamond crystal defect layers was determined to be 0.4 and 1.6 nm, respectively. After ......","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_1617186643794":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier","subitem_publisher_language":"en"}]},"item_1617186783814":{"attribute_name":"識別子","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"https://doi.org/10.1016/j.diamond.2020.108207"}]},"item_1617186920753":{"attribute_name":"収録物識別子","attribute_value_mlt":[{"subitem_source_identifier":"0925-9635","subitem_source_identifier_type":"ISSN"}]},"item_1617187056579":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-01","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"108207","bibliographicVolumeNumber":"111","bibliographic_titles":[{"bibliographic_title":"Diamond and Related Materials","bibliographic_titleLang":"en"}]}]},"item_1617258105262":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_b1a7d7d4d402bcce","subitem_version_type":"AO"}]},"item_1617353299429":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.diamond.2020.108207","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"AA11525373","subitem_relation_type_select":"NCID"}}]},"item_1722232185104":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-12-27"}],"displaytype":"detail","filename":"09259635-111-108207.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"label":"本文","objectType":"fulltext","url":"https://ocu-omu.repo.nii.ac.jp/record/2019805/files/09259635-111-108207.pdf"},"version_id":"89ddb9f7-b383-46fd-b7e9-5b86ebdf45f2"}]},"item_1722577087681":{"attribute_name":"記事種別等","attribute_value_mlt":[{"subitem_description":"Research article","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_1725590125188":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_title":"Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications","item_type_id":"40002","owner":"7","path":["1721355153493"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-12-27"},"publish_date":"2022-12-27","publish_status":"0","recid":"2019805","relation_version_is_last":true,"title":["Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications"],"weko_creator_id":"7","weko_shared_id":-1},"updated":"2024-10-31T01:15:06.476127+00:00"}