{"created":"2024-10-31T00:51:32.098016+00:00","id":2019635,"links":{},"metadata":{"_buckets":{"deposit":"f717efa6-233a-444d-b559-40de66302f0a"},"_deposit":{"created_by":7,"id":"2019635","owners":[7],"pid":{"revision_id":0,"type":"depid","value":"2019635"},"status":"published"},"_oai":{"id":"oai:ocu-omu.repo.nii.ac.jp:02019635","sets":["1623632832836:1721355153493"]},"author_link":[],"item_1617186331708":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Realization of direct bonding of single crystal diamond and Si substrates","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"作成者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Osaka City University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Liang, Jianbo","creatorNameLang":"en"},{"creatorName":"リョウ, ケンボ","creatorNameLang":"ja-Kana"},{"creatorName":"梁, 剣波","creatorNameLang":"ja"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Saga University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Masuya, Satoshi","creatorNameLang":"en"},{"creatorName":"マスヤ, サトシ","creatorNameLang":"ja-Kana"},{"creatorName":"桝谷, 聡","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"0000-0001-8707-8561","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0001-8707-8561"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Saga University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Kasu, Makoto","creatorNameLang":"en"},{"creatorName":"カス, マコト","creatorNameLang":"ja-Kana"},{"creatorName":"嘉数, 誠","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"1000050393731","nameIdentifierScheme":"KAKEN2","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000050393731"},{"nameIdentifier":"0000-0002-0881-9454","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0002-0881-9454"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Osaka City University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Shigekawa, Naoteru","creatorNameLang":"en"},{"creatorName":"シゲカワ, ナオテル","creatorNameLang":"ja-Kana"},{"creatorName":"重川, 直輝","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"1000060583698","nameIdentifierScheme":"KAKEN2","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000060583698"},{"nameIdentifier":"0000-0001-7454-8640","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0001-7454-8640"}]}]},"item_1617186499011":{"attribute_name":"権利情報","attribute_value_mlt":[{"subitem_rights":"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. To link to LIANG J et al.., Appl. Phys. Lett. 110, 111603(2017). The URL is: http://doi.org/10.1063/1.4978666","subitem_rights_language":"en"}]},"item_1617186626617":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Diamond/Si junctions have been achieved by surface activated bonding method without any chemical and heating treatments. Bonded interfaces were obtained that were free from voids and mechanical cracks. Observations by using transmission electron microscopy indicated that an amorphous layer with a thickness of ~20nm across the bonded interface was formed, and no structural defects were observed at the interface....","subitem_description_language":"en","subitem_description_type":"Abstract"},{"subitem_description":"This work was supported by the Grant-in-Aid for Challenging Exploratory Research (16K13676) of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing","subitem_publisher_language":"en"}]},"item_1617186783814":{"attribute_name":"識別子","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"https://doi.org/10.1063/1.4978666"}]},"item_1617186920753":{"attribute_name":"収録物識別子","attribute_value_mlt":[{"subitem_source_identifier":"1077-3118","subitem_source_identifier_type":"ISSN"}]},"item_1617187056579":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageStart":"111603","bibliographicVolumeNumber":"110","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_1617258105262":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1617353299429":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"AA11868096","subitem_relation_type_select":"NCID"}}]},"item_1722232185104":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-04-03"}],"displaytype":"detail","filename":"10773118-110-11-111603.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"label":"本文","objectType":"fulltext","url":"https://ocu-omu.repo.nii.ac.jp/record/2019635/files/10773118-110-11-111603.pdf"},"version_id":"2ed2bb90-cf80-40a6-ad65-88fe6a1c1f4f"}]},"item_1725590125188":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_title":"Realization of direct bonding of single crystal diamond and Si substrates","item_type_id":"40002","owner":"7","path":["1721355153493"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2018-04-03"},"publish_date":"2018-04-03","publish_status":"0","recid":"2019635","relation_version_is_last":true,"title":["Realization of direct bonding of single crystal diamond and Si substrates"],"weko_creator_id":"7","weko_shared_id":-1},"updated":"2024-10-31T00:51:40.589921+00:00"}