{"created":"2024-10-31T00:48:23.157992+00:00","id":2019594,"links":{},"metadata":{"_buckets":{"deposit":"c12a166c-6e58-41b1-bc18-0de8615a6365"},"_deposit":{"created_by":7,"id":"2019594","owners":[7],"pid":{"revision_id":0,"type":"depid","value":"2019594"},"status":"published"},"_oai":{"id":"oai:ocu-omu.repo.nii.ac.jp:02019594","sets":["1623632832836:1721355153493"]},"author_link":[],"item_1617186331708":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design","subitem_title_language":"en"}]},"item_1617186419668":{"attribute_name":"作成者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Osaka City University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Liang, Jianbo","creatorNameLang":"en"},{"creatorName":"リョウ, ケンボ","creatorNameLang":"ja-Kana"},{"creatorName":"梁, 剣波","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"1000080757013","nameIdentifierScheme":"KAKEN2","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000080757013"},{"nameIdentifier":"0000-0001-5320-6377","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0001-5320-6377"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Osaka City Univeresity","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Kobayashi, Ayaka","creatorNameLang":"en"},{"creatorName":"コバヤシ, アヤカ","creatorNameLang":"ja-Kana"},{"creatorName":"小林, 礼佳","creatorNameLang":"ja"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Tohoku University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Shimizu, Yasuo","creatorNameLang":"en"},{"creatorName":"シミズ, ヤスオ","creatorNameLang":"ja-Kana"},{"creatorName":"清水, 康雄","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"1000040581963","nameIdentifierScheme":"KAKEN2","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000040581963"},{"nameIdentifier":"0000-0002-6844-8165","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0002-6844-8165"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Tohoku University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Ohno, Yutaka","creatorNameLang":"en"},{"creatorName":"オオノ, ユタカ","creatorNameLang":"ja-Kana"},{"creatorName":"大野, 裕","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"1000080243129","nameIdentifierScheme":"KAKEN2","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000080243129"},{"nameIdentifier":"0000-0003-3998-4409","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0003-3998-4409"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Adamant Namiki Precision Jewel Co. Ltd.","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Kim, Seong-Woo","creatorNameLang":"en"},{"creatorName":"金, 聖祐","creatorNameLang":"ja"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Adamant Namiki Precision Jewel Co. Ltd.","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Koyama, Koji","creatorNameLang":"en"},{"creatorName":"コヤマ, コウジ","creatorNameLang":"ja-Kana"},{"creatorName":"小山, 浩司","creatorNameLang":"ja"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Saga University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Kasu, Makoto","creatorNameLang":"en"},{"creatorName":"カス, マコト","creatorNameLang":"ja-Kana"},{"creatorName":"嘉数, 誠","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"1000050393731","nameIdentifierScheme":"KAKEN2","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000050393731"},{"nameIdentifier":"0000-0002-0881-9454","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0002-0881-9454"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Tohoku University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Nagai, Yasuyoshi","creatorNameLang":"en"},{"creatorName":"ナガイ, ヤスヨシ","creatorNameLang":"ja-Kana"},{"creatorName":"永井, 康介","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"1000010302209","nameIdentifierScheme":"KAKEN2","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000010302209"},{"nameIdentifier":"0000-0001-7587-6128","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0001-7587-6128"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Osaka City University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Shigekawa, Naoteru","creatorNameLang":"en"},{"creatorName":"シゲカワ, ナオテル","creatorNameLang":"ja-Kana"},{"creatorName":"重川, 直輝","creatorNameLang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"1000060583698","nameIdentifierScheme":"KAKEN2","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000060583698"},{"nameIdentifier":"0000-0001-7454-8640","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0001-7454-8640"}]}]},"item_1617186499011":{"attribute_name":"権利情報","attribute_value_mlt":[{"subitem_rights":"This is the peer reviewed version of the following article: Advanced Materials. Vol.33, Issu.43, 2104564, which has been published in final form at https://doi.org/10.1002/adma.202104564. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley's version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.","subitem_rights_language":"en"}]},"item_1617186609386":{"attribute_name":"主題","attribute_value_mlt":[{"subitem_subject":"窒化ガリウム","subitem_subject_language":"ja","subitem_subject_scheme":"Other"},{"subitem_subject":"ダイヤモンド","subitem_subject_language":"ja","subitem_subject_scheme":"Other"},{"subitem_subject":"表面活性化接合法","subitem_subject_language":"ja","subitem_subject_scheme":"Other"},{"subitem_subject":"GaN","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"diamond heterointerface","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"residual stress","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"sp^2 ratio","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"intensity gradients","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"surface activated bonding","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_1617186626617":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究グループは、窒化ガリウムとダイヤモンドの直接接合に成功しました。窒化ガリウムを利用したトランジスタは、シリコンに代わる次世代半導体として、携帯電話の基地局などで幅広く使用されているものの、動作時に極度に温度上昇するため性能が大きく制限されています。加えて大型の放熱部材も必要です。研究グループは、地球上で最も熱伝導率が高く、最も効率的に熱を逃すことができるダイヤモンドと窒化ガリウムとの常温での直接接合に成功し、直接接合が1,000℃の熱処理にも耐えることを実証しました。更に、接合に際してダイヤモンドの結晶構造が壊れるものの、熱処理することで再結晶化することを明らかにしました。これは界面で高い熱伝導率が保持することを示します。今回の成果により窒化ガリウムトランジスタで発生する温度上昇をこれまでの1/4倍程度まで抑制でき、大幅な省エネにつながると予測されます。今後、窒化ガリウムトランジスタの使用範囲が拡大し、レーダーやインバータなどの大電力用途にも使用できるとともに、持続可能な社会の実現にも貢献すると期待されます。","subitem_description_language":"ja","subitem_description_type":"Abstract"},{"subitem_description":"The direct integration of gallium nitride (GaN) and diamond holds much promise for high-power devices. However, it is a big challenge to grow GaN on diamond due to the large lattice and thermal-expansion coefficient mismatch between GaN and diamond. In this work, ...","subitem_description_language":"en","subitem_description_type":"Abstract"},{"subitem_description":"This work was supported by the \"Research and development of high thermal stability interface by direct bonding of diamond\" project in the Feasibility Study Program of New Energy and Industrial Technology Development Organization (NEDO) (contract number: 19101242-0), JSPS KAKENHI Grant Number JP20K04581, and the Osaka City University (OCU) Strategic Research Grant 2020 for top basic research.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_1617186643794":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Wiley","subitem_publisher_language":"en"}]},"item_1617186783814":{"attribute_name":"識別子","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"https://doi.org/10.1002/adma.202104564"}]},"item_1617186920753":{"attribute_name":"収録物識別子","attribute_value_mlt":[{"subitem_source_identifier":"1521-4095","subitem_source_identifier_type":"ISSN"}]},"item_1617187056579":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-10-28","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"43","bibliographicPageStart":"2104564","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"Advanced Materials","bibliographic_titleLang":"en"}]}]},"item_1617258105262":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_1617265215918":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_b1a7d7d4d402bcce","subitem_version_type":"AO"}]},"item_1617353299429":{"attribute_name":"関連情報","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1002/adma.202104564","subitem_relation_type_select":"DOI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"AA11613845","subitem_relation_type_select":"NCID"}}]},"item_1722232185104":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-10-03"}],"displaytype":"detail","filename":"15214095-33-43-2104564.pdf","filesize":[{"value":"2.8 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"label":"本文","objectType":"fulltext","url":"https://ocu-omu.repo.nii.ac.jp/record/2019594/files/15214095-33-43-2104564.pdf"},"version_id":"bae65574-517b-49b6-ad66-9140784f385f"}]},"item_1722577087681":{"attribute_name":"記事種別等","attribute_value_mlt":[{"subitem_description":"Research Article","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_1725590125188":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_title":"Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design","item_type_id":"40002","owner":"7","path":["1721355153493"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-10-03"},"publish_date":"2022-10-03","publish_status":"0","recid":"2019594","relation_version_is_last":true,"title":["Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design"],"weko_creator_id":"7","weko_shared_id":-1},"updated":"2024-10-31T00:48:31.210377+00:00"}